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  1. 根来,昇 (ネゴロ,ノボル)
    2. https://www.lib.hokudai.ac.jp/dissertations/list/?FF=4&LANG=en&ACCN=2004030258
    Title in Japanese成長直後およびシリコン界面層で不活性化したGaAs(001) 表面の走査トンネル顕微鏡によるその場評価
    Title in EnglishIn-Situ Scanning Tunneling Microscopy Characterization of As Grown and Silicon Interlayer Passivated GaAs(001) Surfaces
    Year of conferral of degrees2003
    Type of degree / Kind of academic degree1（課程博士） / 036（博士(工学)）
    Report number6846
    Date of conferral of degrees2004-03-25
    The primary examiner / A deputy examiner長谷山,英機 / 福井,孝志 佐野,栄一 橋詰,保
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    Summary6846_negoro.pdf