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- 齋,寛展 (サイ,ヒロノブ) https://www.lib.hokudai.ac.jp/dissertations/list/?FF=4&LANG=en&ACCN=1103604759
Title in Japanese | ターシャリブチルホスフィンを用いたインジウムガリウムリンのガスソース分子線エピタキシャル成長 |
Title in English | Gas Source Molecular Beam Epitaxial Growth of Indium Gallium Phosphide Using Tertiarybutylphosphine |
Year of conferral of degrees | 1998 |
Type of degree / Kind of academic degree | 1(課程博士) / 036(博士(工学)) |
Report number | 4759 |
Date of conferral of degrees | 1999-03-25 |
The primary examiner / A deputy examiner | 長谷川,英機 / 福井,孝志 酒井,洋輔 藤倉,序章 |
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Summary | 4759_sai.pdf |